CGSim package for analysis and optimization of Cz, LEC, VCz, and Bridgman growth of semiconductor and semitransparent crystals
CGSim can be effectively applied to the following practical problems:
Control and optimization of the crystallization front geometry and V/G distribution by adjustment of the hot zone and growth parameters.
Increase of the crystallization rate with keeping high crystal quality.
Control over stress and defects in the growing crystal. Defect engineering via accurate adjustment of the heat shields.
Governing melt convection via crystal/crucible rotation rates, magnetic fields of various strength and orientation. Stabilization of convection in the melt while maintaining reasonable turbulent mixing.
Analysis of impurity transport in both the melt and gas. Prediction of oxygen and carbon containing species concentrations in Si CZ growth. Adjustment of growth conditions and modification of the hot zone aimed at providing desired impurity concentrations.
Adequate account of encapsulant, turbulent gas flow, and convective heat transport in liquid encapsulated growth.
Modelling support for design and optimization of new crystal growth setups.
Capabilities of the CGSim package are illustrated through detailed application examples listed below:
Modeling of casting process for silicon solar cells
100 mm Czochralski Silicon Growth
300 mm Czochralski Silicon growth
Effect of magnetic fields in 400 mm Czochralski Silicon growth
Numerical analysis of sapphire crystal growth by the Kyropoulos technique
VCz growth of 100 mm GaAs
High-pressure liquid-encapsulated Czochralski growth (HPLEC) of InP
CsI crystal growth by continuous feed method
Quartz crystal growth in hydrothermal autoclave
Adjustment of heater power distribution during VGF growth of GaAs crystals
HEM Sapphire crystal growth
Capabilities of Basic CGSim include:
Radiative heat transport
Conductive heat transport
Heater power adjustment to provide the required crystallization rate
Calculation of crystallization front geometry
Automatic reconstruction of the geometry for several crystal positions
Special models for anisotropic characteristics of materials
The Basic CGSim program is developed for industries and research teams. Graphical User Interface of the Basic CGSim code requires no special computational skills. All setup and computational steps are highly automated to minimize user efforts.
Work with Basic CGSim includes the following stages:
Specification of the growth system geometry
Specification of material properties
Boundary condition specification
Visualization of the results